Infineon introduces new EiceDRIVER™ 1EDN71x6G HS 200 V single-channel gate driver family
The Infineon Technologies all new EiceDRIVERTM 1EDN71x6G HS 200V single-channel gate driver family helps in performance enhancement of GaN SG HEMTs
With modern power electronics, it is a key requirement to minimize R&D efforts and costs along with achieving optimized, reliable and efficient operations of medium-voltage gallium-nitride (GaN) switches.
Infineon Technologies AG introduces the EiceDRIVERTM 1EDN71x6G HS 200V single-channel gate driver IC family, in line with its strategically-designed GaN product portfolio to continuously strengthen full system solutions.
The new product family is designed with an intent to improve the performance of CoolGaNTM Schottky Gate (SG) HEMTs, while also offering compatibility with other GaN HEMTs and Silicon MOSFETs.
Among the wide range of applications targeted by the gate drivers are DC-DC converters, motor drives, telecom, server, robots, drones, power tools and class D audio amplifiers.
According to company, the 1EDN71x6G variants are available with selectable pull-up and pull-down driving strengths, making it possible to optimize waveforms and switching speeds without gate resistors. The result is a smaller power stage layout with fewer BOM components.
For applications with significant paralleling, the strongest and fastest driving variant (1EDN7116G) is recommended. While, the weakest/slowest driving variant (1EDN7146G) can be used for some dv/dt-limited applications, such as motor drives or very small-die GaN HEMTs (high RDS(on), low Qg).
Depending on the minimum recommended dead time, pulse width, and propagation delay, each variant has a different blanking time.
The feature of truly differential logic input (TDI) helps in eliminating the risk of false triggering due to ground bounce in low-side applications, thus enabling the 1EDN71x6G to address the high-side applications, as well.
In addition, all variants feature an active Miller clamp with a strong pull-down to prevent induced turn-on. The gate driving loop is thus more robust against glitches, especially when driving transistors with a high Miller ratio.
Furthermore, the 1EDN71x6G has active bootstrap clamping to prevent the bootstrap capacitor from overcharging during dead time. In this way, bootstrap supply voltage is regulated to protect the high-side transistor’s gate without requiring a separate regulation circuit.
For additional Miller-induced turn-on immunity, e.g. when PCB layout cannot be optimized fully, an optional programmable charge pump with adjustable negative turn-off supply is also available.
Availability: You can now order EiceDRIVER HS 200 V single-channel gate driver ICs 1EDN7116G, 1EDN7126G, 1EDN7136G, and 1EDN7146G for CoolGaN SG HEMTs in a PG-VSON-10 package.
For more information visit: www.infineon.com/eicedriver-1edn71x6x.
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